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Section 25 NAND Flash Memory Controller
Page 1322 of 2108 R01UH0134EJ0400 Rev. 4.00
Sep 24, 2014
SH7262 Group, SH7264 Group
25.4 Operation
25.4.1 Access Sequence
This module performs accesses in several independent stages.
For example, NAND-type flash memory programming consists of the following five stages.
First command issue stage (program setup command)
Address issue stage (program address)
Data stage (output)
Second command issue stage (program start command)
Status read stage
NAND-type flash memory programming access is achieved by executing these five stages
sequentially. An access to flash memory is completed at the end of the final stage (status read
stage).
First
command
Command/
address
Data input
Program start
ALE
WE
RE
Address Data
Program
Second
command
H'80
A1
A2
A3
A4 H'10
H'70
Status read
CLE
Figure 25.2 Programming Operation for NAND-Type Flash Memory and Stages
For details on NAND-type flash memory read operation, see section 25.4.4, Command Access
Mode.
25.4.2 Operating Modes
Two operating modes are supported.
Command access mode
Sector access mode
The ECC generation and error check are performed in sector access mode.