Panasonic 2SB1030A Network Card User Manual


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Transistors
Publication date : October 2008 SJC00418AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1030A
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SD1423A
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–60 V
Collector-emitter voltage (Base open) V
CEO
–50 V
Emitter-base voltage (Collector open) V
EBO
–7 V
Collector current I
C
– 0.5 A
Peak collector current I
CP
–1 A
Collector power dissipation P
C
300 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= –10 mA, I
E
= 0 –60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= –2 mA, I
B
= 0 –50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= –10 mA, I
C
= 0 –7 V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= –20 V, I
E
= 0 – 0.1
mA
Collector-Emitter cutoff current (Base open) I
CEO
V
CE
= –20 V, I
B
= 0 –1
mA
Forward current transfer ratio
h
FE1
*
V
CE
= –10 V, I
C
= –150 mA 85 340
h
FE2
V
CE
= –10 V, I
C
= –500 A 40
Collector-emitter saturation voltage V
CE(sat)
I
C
= –300 mA, I
B
= –30 mA – 0.35 – 0.60 V
Transition frequency f
T
V
CB
= –10 V, I
E
= 50 mA, f = 200 MHz 120 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= –10 V, I
E
= 0, f = 1 MHz 3.5 15.0 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R S
h
FE1
85 to 170 120 to 240 170 to 340
Package
Code
NS-B1
Pin Name
1. Emitter
2. Collector
3. Base
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